Defect engineering in two-dimensional materials

被引：11
|
作者：
Jiang, Jie [1 ]
Ni, Zhenhua [1 ]
机构：
[1] Southeast Univ, Sch Phys, Nanjing 211189, Jiangsu, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2019年 / 40卷 / 07期
关键词：
PHOTOLUMINESCENCE ENHANCEMENT; MOS2;
D O I：
10.1088/1674-4926/40/7/070403
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页数：2
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