Analysis of boron in diamond with UV photoluminescence

被引：15

作者：

Lu, Hsiao-Chi ^{[1
]}

Peng, Yu-Chain ^{[1
]}

Lin, Meng-Yeh ^{[1
]}

Chou, Sheng-Lung ^{[1
]}

Lo, Jen-Iu ^{[1
]}

Cheng, Bing-Ming ^{[1
]}

机构：

[1] Natl Synchrotron Radiat Res Ctr, 101,Hsin Ann Rd,Hsinchu Sci Pk, Hsinchu 30076, Taiwan

来源：

CARBON | 2017年 / 111卷

关键词：

SEMICONDUCTING DIAMOND; QUANTITATIVE-ANALYSIS; MASS-SPECTROMETRY; NITROGEN DEFECTS; NM REGION; LUMINESCENCE; CATHODOLUMINESCENCE; SPECTROSCOPY; FILMS; RESOLUTION;

D O I：

10.1016/j.carbon.2016.10.082

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Photoluminescence (PL) spectra of boron-doped diamonds at temperature 298 K were recorded with excitation in wavelength range 110-300 nm from a synchrotron source. A prominent emission feature was measured at 480.0 nm, corresponding to energy 2.535 eV; we detected also a distinct photoluminescence excitation (PLE) band at 220.5 nm, 5.623 eV, for the first time. For sensitive analysis, the UV-PL technique provides a non-destructive method; we therefore recommend the use of UV -PL spectra excited in the region 200-230 nm to analyze boron dopant in diamonds. The least detectable concentration of the boron dopant is about 1 x 10(16) atoms cm(-3). (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：835 / 838

页数：4

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