All-Digital PLL Frequency and Phase Noise Degradation Measurements Using Simple On-Chip Monitoring Circuits

被引:0
作者
Park, Gyusung [1 ]
Kim, Minsu [1 ]
Kim, Chris H. [1 ]
Kim, Bongjin [2 ]
Reddy, Vijay
机构
[1] Univ Minnesota, Dept Elect & Comp Engn, 200 Union Str SE, Minneapolis, MN 55455 USA
[2] Nanyang Technol Univ, Dept Elect & Elect Engn, Singapore 639798, Singapore
来源
2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2018年
关键词
Bias temperature instability (BTI); hot carrier injection (HCI); thermal recovery; phase-locked loop (PLL); phase noise; LOW-DROPOUT REGULATOR; SILICON ODOMETER;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using simple on-chip monitoring circuits, we precisely characterized the impact of hot carrier injection and bias temperature instability on frequency and phase noise degradation of a 65nm all-digital PLL circuit. Experimental data shows that PLL phase noise degrades with aging even though the output frequency is maintained constant due to the PLL feedback operation. Results show that applying high temperature annealing can recover most of the phase noise degradation.
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页数:6
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