Design and properties of silicon avalanche photodiodes

被引：0

作者：

Wegrzecka, I ^{[1
]}

Wegrzecki, M ^{[1
]}

Grynglas, M ^{[1
]}

Bar, J ^{[1
]}

Uszynski, A ^{[1
]}

Grodecki, R ^{[1
]}

Grabiec, P ^{[1
]}

Krzeminski, S ^{[1
]}

Budzynski, T ^{[1
]}

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

OPTO-ELECTRONICS REVIEW | 2004年 / 12卷 / 01期

关键词：

silicon avalanche photodiode; silicon photodiode; photodetector;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A family of silicon avalanche photodiodes with an n(+)-p-pi-p(+) epiplanar structure was developed at the Institute of Electron Technology (ITE). The diameters of photosensitive area range from 0.3 mm to 5 mm. These photodiodes are optimised for detection of 800-850 nm radiation and in that range achieve excellent parameters - high gain, low noise, high detectivity. The detailed research on their spectral dependencies of the gain and noise parameters has revealed that their range of operating is considerable wider and stretches from 550 to 1000 nm. The principles of operation and design considerations concerning avalanche photodiodes are outlined in this paper Next, the design, technology and properties of silicon avalanche photodiodes developed at the ITE are discussed. Avalanche photodiodes are widely used in detection of very weak and very fast optical signals. Presently in the world, the studies are carried out on applying the avalanche photodiodes in detection of X radiation and in the scintillation detection of nuclear radiation.

引用

页码：95 / 104

页数：10

共 8 条

[1] Design and technology of a scintillating fiber sensor with silicon avalanche photodiode. [J].