Spin Polarization Oscillation and Spin-Polarized Diode Based on Graphene Rashba-Strain Double Junctions

被引：0

作者：

Wu Qing-Ping ^{[1
]}

Liu Zheng-Fang ^{[1
]}

Chen Ai-Xi ^{[1
]}

He Xing-Dao ^{[2
]}

机构：

[1] East China Jiaotong Univ, Sch Basic Sci, Nanchang 330013, Peoples R China

[2] Nanchang Hangkong Univ, Sch Measuring & Opt Engn, Nanchang 330063, Peoples R China

来源：

COMMUNICATIONS IN THEORETICAL PHYSICS | 2014年 / 61卷 / 01期

基金：

中国国家自然科学基金;

关键词：

graphene; spin polarization diode; Rashba spin-orbit interaction; strian; BAND;

D O I：

10.1088/0253-6102/61/1/22

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate spin-dependent electron transport through graphene-based Rashba-strain double junctions. It is found that when electrons are injected from left normal graphene region, high spin polarization oscillation is achieved due to the wave-vector-dependent resonant tunneling. The spin polarization is negligible once the incident direction is reversed. Such a remarkable difference arises from pseudogap caused by the Rashba spin-orbit interaction.

引用

页码：135 / 140

页数：6

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