A 5.3μA Quiescent Current Fully-Integrated Low-Dropout (LDO) Regulator with Transient Recovery Time Enhancement

被引：0

作者：

Furth, Paul M. ^{[1
]}

Krishnapurapu, Srikar ^{[1
]}

Pakala, Harsh ^{[1
]}

Haque, Mohammad A. ^{[1
]}

机构：

[1] New Mexico State Univ, Klipsch Sch Elect & Comp Engn, VLSI Lab, Las Cruces, NM 88003 USA

来源：

2013 IEEE 56TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS) | 2013年

关键词：

low power; low-dropout (LDO) regulator; slew-rate enhancement; OUTPUT-CAPACITORLESS LDO; CMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique to decrease the transient recovery time in a very low-quiescent current low-dropout (LDO) voltage regulator is introduced. The new Transient Recovery Time Enhancement (TRTE) block comprises a voltage-to-current converter, current comparator and an NMOS output transistor. The proposed LDO using the TRTE block was fabricated in a 0.5-mu m 2P3M CMOS process. The circuit operates at a total quiescent current of 5.3 mu A with a maximum load current of 50 mA while supplying a regulated output voltage of 1.5 V to a 100 pF load. Experimental results indicate a drop-out voltage of 123 mV with an average recovery time of 5.22 mu s under maximum load current changes.

引用

页码：9 / 12

页数：4

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