Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO2

被引:17
|
作者
Sias, US
Moreira, EC
Ribeiro, E
Boudinov, H
Amaral, L
Behar, M
机构
[1] Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil
[2] Ctr Fed Educ Technol, Pelotas, RS, Brazil
[3] Univ Estadual Rio Grande Sul, Guaiba, RS, Brazil
[4] Lab Nacl Luz Sincrotron, BR-13084971 Campinas, SP, Brazil
关键词
D O I
10.1063/1.1691182
中图分类号
O59 [应用物理学];
学科分类号
摘要
A systematic study of photoluminescence (PL) behavior of Si nanocrystals in SiO2 obtained by ion implantation in a large range of temperatures (-200 up to 800 degreesC), and subsequent furnace annealing in N-2 ambient was performed. A PL signal in the wavelength range 650-1000 nm was observed. The PL peak wavelength and intensity are dependent on the fluence, implantation and annealing temperatures. It was found that after annealing at 1100 degreesC, both implantations of 1.5x10(17) Si/cm(2) at room temperature or 0.5x10(17) Si/cm(2) at 400 degreesC result in the same PL peak intensity. By varying the implantation temperature we can achieve the same PL efficiency with lower fluences showing that hot implantations play an important role for initial formation of the nanocrystals. The PL intensity evolution as a function of the annealing time was also studied. As the implantation temperature was increased, larger mean size Si nanocrystals were observed by means of dark-field transmission electron microscopy analysis. (C) 2004 American Institute of Physics.
引用
收藏
页码:5053 / 5059
页数:7
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