Tilted Epitaxial ZnO Nanospears on Si(001) by Chemical Bath Deposition

被引：23
作者：
Mu, Guojun
Gudavarthy, Rakesh V.
Kulp, Elizabeth A.
Switzer, Jay A. [1 ]
机构：
[1] Missouri Univ Sci & Technol, Dept Chem, Rolla, MO 65409 USA
来源：
CHEMISTRY OF MATERIALS | 2009年 / 21卷 / 17期
关键词：
HETEROJUNCTION DIODES; OPTICAL-PROPERTIES; OXIDE; ELECTROLUMINESCENCE; ELECTRODEPOSITION; NANORODS; GROWTH; GAN;
D O I：
10.1021/cm9010019
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We show that epitaxial ZnO nanospears can be deposited onto degenerate p-type Si(001) from an alkaline supersaturated solution of Zn(II) at 70 degrees C using chemical bath deposition. The lattice mismatch between the hexagonal ZnO and diamond cubic Si is reduced from -40.16% for all un-tilted structure to -0.25% in the ZnO[1 (2) over bar 10] direction and -0.99% in ZnO[25 (76) over bar] direction by tilting the nanospears 51 degrees relative to the surface normal. The tilted nanostructure brings the (20 (2) over bar3) planes of ZnO into coincidence with the (001) planes of Si.
引用
收藏
页码：3960 / 3964
页数：5
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