Transit time of electrons and holes in micron and submicron MSM photodetectors

被引：1

作者：

Gvozdic, DM

Radunovic, JB

机构：

[1] Faculty of Electrical Engineering, University of Belgrade, 11000 Belgrade

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 05期

关键词：

D O I：

10.1088/0268-1242/12/5/012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we analyse the transit time of electrons and holes in the metal-semiconductor-metal photodetector (MSM-PD). A phenomenological model is used for 2D numerical simulation of carrier transport and intervalley transfer. It is shown that for submicron dimensions the response time depends almost equally on electron and hole transit times, while for micron dimensions it is mostly determined by holes.

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收藏

页码：589 / 594

页数：6

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