Exchange interaction of hole-spin qubits in double quantum dots in highly anisotropic semiconductors

被引:12
作者
Hetenyi, Bence [1 ]
Kloeffel, Christoph [1 ]
Loss, Daniel [1 ]
机构
[1] Univ Basel, Dept Phys, Klingelbergstr 82, CH-4056 Basel, Switzerland
来源
PHYSICAL REVIEW RESEARCH | 2020年 / 2卷 / 03期
基金
瑞士国家科学基金会;
关键词
COMPUTATION; ELECTRONS; BLOCKADE; GATE;
D O I
10.1103/PhysRevResearch.2.033036
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the exchange interaction between two hole-spin qubits in a double quantum dot setup in a silicon nanowire in the presence of magnetic and electric fields. Based on symmetry arguments we show that there exists an effective spin that is conserved even in highly anisotropic semiconductors, provided that the system has a twofold symmetry with respect to the direction of the applied magnetic field. This finding facilitates the definition of qubit basis states and simplifies the form of exchange interaction for two-qubit gates in coupled quantum dots. If the magnetic field is applied along a generic direction, cubic anisotropy terms act as an effective spin-orbit interaction introducing novel exchange couplings even for an inversion symmetric setup. Considering the example of a silicon nanowire double dot, we present the relative strength of these anisotropic exchange interaction terms and calculate the fidelity of the root SWAP gate. Furthermore, we show that the anisotropy-induced spin-orbit effects can be comparable to that of the direct Rashba spin-orbit interaction for experimentally feasible electric field strengths.
引用
收藏
页数:17
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