CuInS2 thin films obtained through an innovative CSVT deposition method from solvothermal-generated precursors

被引：11

作者：

Ben Belgacem, J. ^{[1
]}

Nouiri, M. ^{[1
]}

Medjnoun, K. ^{[2
,3
]}

Djessas, K. ^{[2
,3
]}

Ben Ayadi, Z. ^{[1
]}

机构：

[1] Univ Gabes, Fac Sci Gabes, Lab Phys Mat & Nanomat Appl Environm, Cite Erriadh Manara Zrig 6072, Gabes, Tunisia

[2] TECNOSUD, Lab Proc Mat & Energie Solaire PROMES CNRS, Rambla Thermodynam, F-66100 Perpignan, France

[3] Univ Perpignan, Via Domitia,52 Ave Paul Alduy, F-68860 Perpignan 9, France

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2018年 / 83卷

关键词：

Thin films; CuInS2; Nanoparticles; Solvothermal methods; SPACED VAPOR TRANSPORT; SOLAR-CELLS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; SINGLE-CRYSTALS; TEMPERATURE; GROWTH; PYROLYSIS; CUGASE2;

D O I：

10.1016/j.mssp.2018.04.039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Copper indium disulfide (CuInS2) nanoparticles with sizes 20 +/- 5 nm were synthesized by solvothermal techniques. Subsequently these were deposited for the first time on glass via a close-spaced vapor transport technique (CSVT) using iodine as transport agent. Optimization of the temperature and time was carried out during the deposition process. The surface properties were investigated in details by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-vis-NIR and Raman spectrophotometer, energy dispersive spectroscopy and electron diffraction (EDS). The CuInS2 films presented polycrystalline morphology, preferentially oriented along the (112) crystallographic plane and have band-gap values between 1.44 and 1.60 eV. The development of these films is relevant for photovoltaic applications.

引用

页码：224 / 230

页数：7

共 36 条

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