A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier module

被引：11

作者：

Yamamoto, K ^{[1
]}

Asada, T ^{[1
]}

Suzuki, S ^{[1
]}

Miura, T ^{[1
]}

Inoue, A ^{[1
]}

Miyakuni, S ^{[1
]}

Otsuji, J ^{[1
]}

Hattori, R ^{[1
]}

Miyazaki, Y ^{[1
]}

Shimura, T ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, High Frequency & Opt Semicond Div, Itami, Hyogo 6648641, Japan

来源：

2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2002年

关键词：

D O I：

10.1109/RFIC.2002.1012041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a 3.5-V operation HBT MMIC power amplifier module for use in GSM/EDGE dual-mode, 900/1800/1900-MHz triple band handset applications. With diode switches and a band select switch built on the MMIC, the module delivers a P-out of 35.5 dBm and a PAE of about 50% for GSM900, a 33.4-dBm P-out and a 45% PAE for GSM1800/1900. While satisfying an error vector magnitude (EVM) of less than 4% and a receive-band noise power of less than -83 dBm/100 kHz, the module also delivers a 29.5 dBm P-out and a PAE of over 25% for EDGE900, a 28.5 dBm P-out and a PAE of over 25% for EDGE1800/1900.

引用

页码：245 / 248

页数：4

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (08) :1109-1120

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