Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs

被引：24

作者：

Kim, Sanghyeon ^{[1
,2
]}

Kim, Seong Kwang ^{[1
]}

Shin, Sanghoon ^{[3
]}

Han, Jae-Hoon ^{[2
]}

Geum, Dae-Myeong ^{[1
,4
]}

Shim, Jae-Phil ^{[5
]}

Lee, Subin ^{[2
]}

Kim, Hansung ^{[5
]}

Ju, Gunwu ^{[5
]}

Song, Jin Dong ^{[2
,6
]}

Alam, M. A. ^{[3
]}

Kim, Hyung-Jun ^{[5
,6
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea

[2] Korea Inst Sci & Technol, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea

[3] Purdue Univ, Dept Elect & Comp Engn, W Lafayette, IN 47907 USA

[4] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[5] KIST, Ctr Spintron, Seoul 02792, South Korea

[6] Korea Univ Sci & Technol, KIST Sch, Div Nano & Informat Technol, Seoul 34113, South Korea

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2019年 / 7卷 / 01期

关键词：

InGaAs MOSFETs; InGaAs-OI; monolithic; 3D; self-heating; Ni-InGaAs;

D O I：

10.1109/JEDS.2019.2907957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key challenge is the difficulty of heat-dissipation through the ultra-thin channels needed to ensure electrostatic integrity of scaled transistors. In this paper, we demonstrate an innovative use of a heat-dissipating shunt of Ni-InGaAs on InGaAs(111) in the S/D extension region, as well as the use of high-conductivity Mo contact to simultaneously improve electrical and thermal stability and heat dissipation in III-V transistors, such that the peak channel temperature is reduced by as much as 25%-30%. Given the exponential temperature sensitivity of transistor reliability, heat shunts will improve transistor lifetime significantly.

引用

页码：869 / 877

页数：9