Structure and stability of ultrathin zirconium oxide layers on Si(001)

被引：633
作者：
Copel, M
Gribelyuk, M
Gusev, E
机构：
[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] IBM Corp, Microelect Div, Analyt Serv, Fishkill, NY 12533 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 04期
关键词：
D O I：
10.1063/1.125779
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have examined the structure of ultrathin ZrO(2) layers on Si(001) using medium energy ion scattering and cross-sectional transmission electron microscopy. Films can be deposited on SiO(2) layers with highly abrupt interfaces by atomic layer deposition. On HF stripped Si(001), nucleation was inhibited, resulting in poorer film morphology. ZrO(2) showed remarkable stability against silicate formation, with no intermixing even after high temperature oxidation. The oxide is vulnerable to high temperature vacuum annealing, with silicidation occurring at temperatures above 900 degrees C. (C) 2000 American Institute of Physics. [S0003- 6951(00)03204-6].
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页码：436 / 438
页数：3
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