Application of ALD high-k Dielectric Films as Charge Storage Layer and Blocking Oxide in Nonvolatile Memories

被引：0

作者：

Zhu, Xiaoxiao ^{[1
,2
]}

Gu, Diefeng ^{[3
,4
]}

Li, Qiliang ^{[1
,2
]}

Baumgart, H. ^{[3
]}

Ioannou, D. E. ^{[1
,2
,4
]}

Suehle, J. S. ^{[1
,2
]}

Richter, C. A. ^{[1
,2
]}

机构：

[1] George Mason Univ, Dept Elect Engn & Comp Engn, Fairfax, VA 22030 USA

[2] NIST, Div Semicond Elect, CMOS & Novel Dev Grp, Gaithersburg, MD 20899 USA

[3] Old Dominion Univ, Dept Elect Engn & Comp Engn, Norfolk, VA 23529 USA

[4] Appl Res Ctr ODU, Jefferson Lab, Newport News, VA 23606 USA

来源：

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7 | 2009年 / 25卷 / 06期

关键词：

HFO2;

D O I：

10.1149/1.3206647

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

ALD high-k dielectric films of HfO2 were utilized for the charge trapping layer and Al2O3 for the blocking oxide layer during fabrication of several Metal/Al2O3/HfO2/SiO2/Si (MAHOS) nonvolatile memory (NVM) cells based on Si nanowire channel. Si nanowires grown from predefined Au catalysts were integrated into memory devices by using a self-aligning approach. For benchmarking and comparison a different Metal/SiO2/HfO2/SiO2/Si (MOHOS) nonvolatile memory cell with a SiO2 blocking layer was also processed. All the Si nanowire nonvolatile memory cells show a large memory window, good endurance and retention, however, the MAHOS cells with Al2O3 blocking layers outperform the MOHOS cell with SiO2 blocking layer.

引用

页码：473 / 479

页数：7

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