Open issues in SiC bulk growth

被引：9

作者：

Chaussende, Didier ^{[1
]}

Ariyawong, Kanaparin ^{[1
]}

Tsavdaris, Nikolaos ^{[1
]}

Seiss, Martin ^{[1
]}

Shin, Yun Ji ^{[1
]}

Dedulle, Jean-Marc ^{[1
]}

Madar, Roland ^{[1
]}

Sarigiannidou, Eirini ^{[1
]}

La Manna, Joseph ^{[1
]}

Chaix-Pluchery, Odette ^{[1
]}

Ouisse, Thierry ^{[1
]}

机构：

[1] Grenoble INP, Minatec, CNRS, Lab Mat & Genie Phys, F-38016 Grenoble, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

bulk growth; PVT; solution growth; modeling; thermodynamics; spirals; PHYSICAL-VAPOR TRANSPORT; SEEDED SOLUTION GROWTH; SUBLIMATION GROWTH; CRYSTAL-GROWTH; THERMODYNAMIC ANALYSIS; NUMERICAL-SIMULATION; MASS-TRANSPORT; PVT GROWTH; SILICON; REDUCTION;

D O I：

10.4028/www.scientific.net/MSF.778-780.3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, an overview of the SiC bulk growth processes is given with a special focus on the most recent results related to growth and modeling. In addition, even if SiC growth is a very old topic and that it is now considered as an "industrial development problem", we will show that there are still many open questions of both fundamental and technological importance related to its crystal growth. Process chemistry and surface mechanisms will be more specifically discussed.

引用

页码：3 / 8

页数：6

共 50 条

[31] Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT
Ariyawong, Kanaparin
Tsavdaris, Nikolaos
Dedulle, Jean-Marc
Sarigiannidou, Eirini
Ouisse, Thierry
Chaussende, Didier
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 31 - 34
[32] Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
Leone, Stefano
Beyer, Franziska C.
Henry, Anne
Hemmingsson, Carl
Kordina, Olof
Janzen, Erik
CRYSTAL GROWTH & DESIGN, 2010, 10 (08) : 3743 - 3751
[33] Top-seeded solution growth of bulk SiC:: Search for fast growth regimes
Epelbaum, BM
Hofmann, D
Müller, M
Winnacker, A
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 107 - 110
[34] Growth of faceted free-spreading SiC bulk crystals by sublimation
Mokhov, EN
Ramm, MG
Ramm, MS
Roenkov, AD
Vodakov, YA
Karpov, SY
Makarov, YA
Helava, H
SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 29 - 32
[35] Specific features of sublimation growth of bulk AlN crystals on SiC wafers
Mokhov, E.
Izmaylova, I.
Kazarova, O.
Wolfson, A.
Nagalyuk, S.
Litvin, D.
Vasiliev, A.
Helava, H.
Makarov, Yu
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3, 2013, 10 (03): : 445 - 448
[36] Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes
Pons, M
Blanquet, E
Dedulle, JM
Ucar, M
Wellmann, P
Danielsson, Ö
Ferret, P
Di Cioccio, L
Baillet, F
Chaussende, D
Madar, R
SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 3 - 8
[37] Solution growth and crystallinity characterization of bulk 6H-SiC
Yashiro, N.
Kusunoki, K.
Kamei, K.
Yauchi, A.
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 33 - 36
[38] Experimental investigation of 4H-SiC bulk crystal growth
Chourou, K
Anikin, M
Bluet, JM
Lauer, V
Guillot, G
Camassel, J
Juillaguet, S
Chaix, O
Pons, M
Madar, R
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 17 - 20
[39] Contact-free reactions between micropipes in bulk SiC growth
Gutkin, Mikhail Yu.
Sheinerman, Alexander G.
Kohn, Victor G.
Argunova, Tatiana S.
Smirnov, Mikhail A.
Je, Jung Ho
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (08): : 1432 - 1437
[40] Mass loss in SiC crystal growth process
Cheng, Jikuan
Gab, Jiqiang
Yang, Jianfeng
Liu, Junlin
Jiang, Xian
Shi, Yonggui
HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2, 2008, 368-372 : 1558 - 1560

← 1 2 3 4 5 →