Open issues in SiC bulk growth

被引：9
|
作者：
Chaussende, Didier [1 ]
Ariyawong, Kanaparin [1 ]
Tsavdaris, Nikolaos [1 ]
Seiss, Martin [1 ]
Shin, Yun Ji [1 ]
Dedulle, Jean-Marc [1 ]
Madar, Roland [1 ]
Sarigiannidou, Eirini [1 ]
La Manna, Joseph [1 ]
Chaix-Pluchery, Odette [1 ]
Ouisse, Thierry [1 ]
机构：
[1] Grenoble INP, Minatec, CNRS, Lab Mat & Genie Phys, F-38016 Grenoble, France
来源：
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷
关键词：
bulk growth; PVT; solution growth; modeling; thermodynamics; spirals; PHYSICAL-VAPOR TRANSPORT; SEEDED SOLUTION GROWTH; SUBLIMATION GROWTH; CRYSTAL-GROWTH; THERMODYNAMIC ANALYSIS; NUMERICAL-SIMULATION; MASS-TRANSPORT; PVT GROWTH; SILICON; REDUCTION;
D O I：
10.4028/www.scientific.net/MSF.778-780.3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In this paper, an overview of the SiC bulk growth processes is given with a special focus on the most recent results related to growth and modeling. In addition, even if SiC growth is a very old topic and that it is now considered as an "industrial development problem", we will show that there are still many open questions of both fundamental and technological importance related to its crystal growth. Process chemistry and surface mechanisms will be more specifically discussed.
引用
收藏
页码：3 / 8
页数：6
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