Physical Origins and Analysis of Negative-Bias Stress Instability Mechanism in Polymer-Based Thin-Film Transistors

被引：3

作者：

Lee, Jaewook ^{[1
,2
]}

Jang, Jaeman ^{[1
]}

Kim, Hyeongjung ^{[1
]}

Lee, Jiyoul

Lee, Bang-Lin ^{[2
]}

Choi, Sung-Jin ^{[1
]}

Kim, Dong Myong ^{[1
]}

Kim, Dae Hwan ^{[1
]}

Kim, Kyung Rok ^{[3
]}

机构：

[1] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea

[2] Samsung Adv Inst Technol, Mat Res & Dev Ctr, Yongin 446712, South Korea

[3] Ulsan Natl Inst Sci & Technol, Sch Elect & Comp Engn, Ulsan 689798, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

Negative-bias stress; instability; polymer; thin-film transistor; density-of-states; redistribution; threshold voltage; ON-current degradation; Schottky contact resistance; FIELD-EFFECT TRANSISTORS; DENSITY-OF-STATES;

D O I：

10.1109/LED.2014.2298861

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The physical origins of the negative-bias stress (NBS) instability in polymer-based thin-film transistors have been characterized. Through the quantitative analysis by TCAD simulation for the NBS time-dependent experimental results, the threshold voltage (V-T)-shift by sub-bandgap density-of-states redistribution forms 70% and 78% for the measured total V-T-shift while V-T-shift by gate oxide charge trapping only takes 30% and 22% at NBS time of 3000 and 7000 s, respectively. In addition, the increase of source/drain Schottky contact resistance (RSD) is the main reason for NBS-induced ON-current (ION) degradation.

引用

页码：396 / 398

页数：3

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