Dopant diffusion during optical fibre drawing

被引：53

作者：

Lyytikäinen, K ^{[1
]}

Huntington, ST

Carter, ALG

McNamara, P

Fleming, S

Abramczyk, J

Kaplin, I

Schötz, G

机构：

[1] Univ Sydney, Opt Fibre Technol Ctr, Eveleigh, NSW 1430, Australia

[2] Australian Photon Cooperat Res Ctr, Eveleigh, NSW 1430, Australia

[3] Univ Sydney, Sch Phys, Sydney, NSW 2006, Australia

[4] Univ Melbourne, Sch Phys, NANO, MNRF, Parkville, Vic 3010, Australia

[5] Nufern, E Granby, CT 06026 USA

[6] Univ Sydney, Electron Microscopy Unit, Sydney, NSW 2006, Australia

[7] Heraeus Tenevo, D-63450 Hanau, Germany

来源：

OPTICS EXPRESS | 2004年 / 12卷 / 06期

关键词：

D O I：

10.1364/OPEX.12.000972

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Diffusion of Ge and F was studied during drawing of silica optical fibres. Preforms were drawn using various draw conditions and fibres analysed using the etching and Atomic Force Microscope (AFM) technique. The results were confirmed by comparison with fibre Refractive Index Profiles ( RIP). Both Ge and F were found to diffuse at high temperature, 2100 degreesC, and low draw speed, 10m/min. Diffusion simulations showed that most diffusion occurred in the neck-down region. The draw temperature and preform feed rate had a comparable effect on diffusion, whereas preform diameter did not significantly affect the diffusion. (C) 2004 Optical Society of America.

引用

页码：972 / 977

页数：6

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