Reliability of H-terminated diamond MESFETs in high power dissipation operating condition

被引：3

作者：

De Santi, C. ^{[1
]}

Pavanello, L. ^{[1
]}

Nardo, A. ^{[1
]}

Verona, C. ^{[2
]}

Rinati, G. Verona ^{[2
]}

Meneghesso, G. ^{[1
]}

Zanoni, E. ^{[1
]}

Meneghini, M. ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, Via Gradenigo 6-B, Padua, Italy

[2] Univ Roma Tor Vergata, Dept Ind Engn, Via Politecn 1, I-00133 Rome, Italy

来源：

MICROELECTRONICS RELIABILITY | 2020年 / 114卷

关键词：

FIELD-EFFECT TRANSISTORS;

D O I：

10.1016/j.microrel.2020.113898

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this work is to study the catastrophic and gradual degradation of H-terminated diamond MESFETs. Such devices are able to withstand high power densities before failure, but are still affected by a bias-dependent degradation. The main degradation modes are both an increase in ON-resistance and threshold voltage. The effect of this device degradation seems to be caused by the higher concentration of a 0.3 eV deep level. Moreover, the presence of a possible variation in hole transfer efficiency cannot be excluded, especially at the highest stress biases. Electroluminescence measurements confirm the increase in hole scattering, and highlight a progressive reduction in peak electric field in the device under test, possibly due to a virtual field plate effect.

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页数：5

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