Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

被引:15
作者
Herzog, Bastian [1 ]
Owschimikow, Nina [1 ]
Schulze, Jan-Hindrik [2 ]
Rosales, Ricardo [2 ]
Kaptan, Yuecel [1 ]
Kolarczik, Mirco [1 ]
Switaiski, Thomas [1 ]
Strittmatter, Andre [2 ]
Bimberg, Dieter [2 ]
Pohl, Udo W. [2 ]
Woggon, Ulrike [1 ]
机构
[1] Tech Univ Berlin, Inst Opt & Atomare Phys, D-10623 Berlin, Germany
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
关键词
LINEWIDTH ENHANCEMENT FACTOR; SURFACE-EMITTING LASERS; 1.5; MU-M; DYNAMICS;
D O I
10.1063/1.4935792
中图分类号
O59 [应用物理学];
学科分类号
摘要
Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one-and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir. (C) 2015 AIP Publishing LLC.
引用
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页数:4
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