Analysis of HBM-ESD current rise time and its deciding factors

被引：0

作者：

Zhou Feng ^{[1
]}

Huang Jiusheng ^{[2
]}

Gao Yougang

Liu Sulin

Wang Xiqing

Wang Langfeng ^{[3
]}

机构：

[1] Beijing Univ Posts & Telecommun, Sch Telecommun Engn, Beijing 100876, Peoples R China

[2] Beijing Inst Appl Electrostat, Beijing 100012, Peoples R China

[3] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China

来源：

CEEM' 2006: ASIA-PACIFIC CONFERENCE ON ENVIRONMENTAL ELECTROMAGNETICS, VOLS 1 AND 2, PROCEEDINGS | 2006年

关键词：

electrostatic discharge (ESD); circuit model; rise time; simulation; fitted polynomial;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Circuit model of ESD test circumstance is established. By Inverse Laplace transform, analytical; expression of current is got. Then we obtain simulation of current rise time (t(r)) under different combination of circuit parameters. A few fitted polynomials that describe the relationship Of t(r) to these parameters are got, whose accuracy is also analyzed.

引用

页码：529 / +

页数：2

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