Analysis of HBM-ESD current rise time and its deciding factors

被引：0
|
作者：
Zhou Feng [1 ]
Huang Jiusheng [2 ]
Gao Yougang
Liu Sulin
Wang Xiqing
Wang Langfeng [3 ]
机构：
[1] Beijing Univ Posts & Telecommun, Sch Telecommun Engn, Beijing 100876, Peoples R China
[2] Beijing Inst Appl Electrostat, Beijing 100012, Peoples R China
[3] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China
来源：
CEEM' 2006: ASIA-PACIFIC CONFERENCE ON ENVIRONMENTAL ELECTROMAGNETICS, VOLS 1 AND 2, PROCEEDINGS | 2006年
关键词：
electrostatic discharge (ESD); circuit model; rise time; simulation; fitted polynomial;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Circuit model of ESD test circumstance is established. By Inverse Laplace transform, analytical; expression of current is got. Then we obtain simulation of current rise time (t(r)) under different combination of circuit parameters. A few fitted polynomials that describe the relationship Of t(r) to these parameters are got, whose accuracy is also analyzed.
引用
收藏
页码：529 / +
页数：2
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