Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

被引：0

作者：

Zhao, Lan ^{[1
]}

Lu, Zhengxiong ^{[1
]}

Cheng, Caijing ^{[1
]}

Zhao, Degang ^{[2
]}

Zhu, Jianjun ^{[2
]}

Sun, Baojuan ^{[2
]}

Qu, Bo ^{[3
]}

Zhang, Xiangfeng ^{[1
]}

Sun, Weiguo ^{[1
]}

机构：

[1] Luoyang Optoelect Inst, Luoyang, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

[3] Jordan Valley Semicond UK Ltd, Durham, England

来源：

MATERIALS RESEARCH, PTS 1 AND 2 | 2009年 / 610-613卷

关键词：

AlxGa1-xN; Band-gap Bowing Parameter; Lattice Strain; Lattice Mismatch; BAND-GAP; OPTICAL-PROPERTIES; PARAMETER; SAPPHIRE;

D O I：

10.4028/www.scientific.net/MSF.610-613.598

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.

引用

页码：598 / 603

页数：6

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