A fast Monte Carlo ion implantation simulation based on statistical enhancement technique and parallel computation

A new statistical enhancement technique is proposed for the efficient Monte Carlo ion implantation simulation. A trajectory multiplication technique was applied to each stochastic ion trajectory calculation process. The ion trajectory was split into some copies by reducing its weight during the calculation to improve the distribution statistics. The splitting point was determined based on the three-dimensional. ion flight length distribution. This technique could improve equivalent dynamic range of the implanted ion distribution profile, and resulted in a significant computation time reduction. Moreover, on the parallel computer (Cenju-3), using the algorithm in which the ions are shared among each processor, more than ten times calculation efficiency could be achieved. Using the new statistical enhancement technique on the parallel computer, approximately 100 times faster calculation was achieved. This enhances the Monte Carte simulation feasibility for the advanced process/device total simulation system.