High efficiency GaAs power MMIC operating with a single 3.0V supply for PACS handsets

被引：0
|
作者：
Yamamoto, S
Yokoyama, T
Kunihisa, T
Nishijima, M
Nishitsuji, M
Nishii, K
Ishikawa, O
机构：
来源：
1997 IEEE MTT-S SYMPOSIUM ON TECHNOLOGIES FOR WIRELESS APPLICATIONS DIGEST | 1997年
关键词：
D O I：
10.1109/MTTTWA.1997.595106
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
A high efficiency 3-stage power MMIC operating with a single 3.0V supply has been developed for 1.9GHz PACS (low tier PCS) handsets. Pseudomorphic double heterojunction modulation doped FET (MODFET) has enabled a single 3.0V operation. The MMIC includes all matching circuits (input, output and internal matching circuits), but drain and gate bias circuits are excluded from the MMIC chip to make the chip size small. New MMIC realizes a high power added efficiency of 30.2% at output power of 24.5dBm and 1.88GHz with low adjacent channel leakage power of -60.0dBc under a single 3.0V bias supply condition. Total gain and operating current are 32.3dB and 307mA, respectively.
引用
收藏
页码：33 / 36
页数：4
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