Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

被引：47

作者：

Lee, Jae-Hoon ^{[1
]}

Oh, Jeong-Tak ^{[1
]}

Park, Jin-Sub ^{[1
]}

Kim, Je-Won ^{[1
]}

Kim, Yong-Chun ^{[1
]}

Lee, Jeong-Wook ^{[2
]}

Cho, Hyung-Koun ^{[3
]}

机构：

[1] Samsung Electromech Co Ltd, Lighting Module R&D Grp, OS Div, Suwon 442743, South Korea

[2] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

[3] Sungkyunkwan Univ, Mat Sci & Engn, Suwon 440746, South Korea

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565308

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

To improve the external quantum efficiency, high quality GaN film was grown on hemispherical patterned sapphire by controlling the V/III ratio during the initial growth stage. The luminous intensity of white flash light emitting diode (LED) grown on hemispherical patterned sapphire (HPS) was estinated to be 5.8 cd at a forward current of 150 mA, which is improved by 20% more than that of LED grown on conventional sapphire substrate. The improvement of luminous intensity was explained by considering not only an increase of the extraction efficiency via the suppressed total internal reflection at the corrugated interface but also a decrease of dislocation density. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2169 / 2173

页数：5

共 9 条

[1]

Beaumont B, 2001, PHYS STATUS SOLIDI B, V227, P1, DOI 10.1002/1521-3951(200109)227:1<1::AID-PSSB1>3.0.CO

[2]

2-Q

[3] Simulation and fabrication of highly efficient InGaN-based LEDs with corrugated interface substrate [J].

Cho, J ;

Kim, H ;

Lee, JW ;

Yoon, S ;

Sone, C ;

Park, Y ;

Yoon, E .

Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07) :2874-2877

[4] Pediatric upper extremity replantation [J].

Kim, JYS ;

Brown, RJ ;

Jones, NF .

CLINICS IN PLASTIC SURGERY, 2005, 32 (01) :1-+

[5] Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage [J].

Kim, S ;

Oh, J ;

Kang, J ;

Kim, D ;

Won, J ;

Kim, JW ;

Cho, HK .

JOURNAL OF CRYSTAL GROWTH, 2004, 262 (1-4) :7-13

[6]

Lee JH, 2003, MRS INTERNET J N S R, V8

[7] Amber InGaN-based light-emitting diodes operable at high ambient temperatures [J].

Mukai, T ;

Narimatsu, H ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (5A) :L479-L481

[8] High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy [J].

Tadatomo, K ;

Okagawa, H ;

Ohuchi, Y ;

Tsunekawa, T ;

Imada, Y ;

Kato, M ;

Taguchi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (6B) :L583-L585

[9] InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode [J].

Yamada, M ;

Mitani, T ;

Narukawa, Y ;

Shioji, S ;

Niki, I ;

Sonobe, S ;

Deguchi, K ;

Sano, M ;

Mukai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (12B) :L1431-L1433

← 1 →