Nanoscale phase change on Ge2Sb2Te5 thin films induced by optical near fields with photoassisted scanning tunneling microscope

A scanning probe microscope coupled with either femtosecond laser pulses or terahertz pulses holds great promise not only for observing ultrafast phenomena but also for fabricating desirable structures at the nanoscale. In this study, we demonstrate that a few-nanometer-scale phase change can be non-thermally stored on the Ge2Sb2Te5 surface by a laser-driven scanning tunneling microscope (STM). An atomically flat Ge2Sb2Te5 surface was irradiated with the optical near-field generated by introducing femtosecond laser pulses to the STM tip-sample junction. The STM topographic images showed that few-nanometer-scale mounds appeared after irradiation. In addition, tunneling conductance spectra showed that the bandgap increased by 0.2eV in the area of 5x5nm(2). These indicate that the nanoscale crystal-to-amorphous phase change was induced by the STM-tip-induced near field. Our approach presented here offers an unprecedented increase in the recording density of optical storage devices and is, therefore, expected to facilitate the development of next-generation information technology.