Low-Ripple and Dual-Phase Charge Pump Circuit Regulated by Switched-Capacitor-Based Bandgap Reference

被引：36

作者：

Huang, Ming-Hsin ^{[1
]}

Fan, Po-Chin ^{[1
]}

Chen, Ke-Horng ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect & Control Engn, Hsinchu 30099, Taiwan

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2009年 / 24卷 / 5-6期

关键词：

Bandgap reference; charge pump; dual-phase power stage; fast transient response; output ripple; system-on-chip (SOC); VOLTAGE;

D O I：

10.1109/TPEL.2008.2010546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a low-ripple and dual-phase charge pump circuit regulated by switched-capacitor-based bandgap reference. Due to design of a buffer stage, a system can have better bandwidth and phase margin, and thus, the transient response and driving capability can be improved. Besides, the dual-phase control can reduce the output voltage ripple by means of only one closed-loop regulation in order to improve the power conversion efficiency. Besides, the proposed automatic body switching (ABS) circuit can efficiently drive the bulk of the power p-type MOSFETs to avoid leakage and potential latch-up. Usually, the regulated charge pump circuit needs a bandgap reference circuit to provide a temperature-independent reference voltage. The switched-capacitor-based bandgap reference circuit is utilized to regulate the output voltage. This chip was fabricated by Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 mu m 3.3 V/5V 2P4M CMOS technology. The input voltage range varies from 2.9 to 5.5 V, and the output voltage is regulated at 5 V Experimental results demonstrate that the charge pump can provide 48 mA maximum load current without any oscillation problems.

引用

页码：1161 / 1172

页数：12

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