High-voltage LDIMOSFETs on HPSI 4H-SiC substrate with dual field plates

被引：2

作者：

Seok, Ogyun ^{[1
]}

Kim, Hyoung Woo ^{[1
]}

Moon, Jeong Hyun ^{[1
]}

Bahng, Wook ^{[1
]}

机构：

[1] Korea Electrotechnol Res Inst, Power Semicond Res Ctr, Chang Won, South Korea

来源：

PHYSICA SCRIPTA | 2019年 / 94卷 / 10期

关键词：

SiC; LDIMOSFET; HPSI; field plate; breakdown voltage; HIGH-TEMPERATURE; MESFET;

D O I：

10.1088/1402-4896/ab23de

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High-voltage lateral double-implanted metal-oxide-semiconductor field-effect transistor on high-purity semi-insulating 4H-SiC substrate with dual field-plates on both gate and drain was experimentally demonstrated and analyzed by a simulation method. E-field crowding under gate and drain was successfully suppressed by the optimized dual field-plates so that high breakdown voltage of 1.6 kV was achieved at L-dr(ift) = 20 mu m. Also, we obtained a low R-on,R-sp (specific onresistance) of 30 m Omega cm(2) at L-dr(ift) = 20 mu m by shrinking the channel length and controlling doping concentration of a drift region.

引用

页数：4

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