Large, non-saturating magnetoresistance in WTe2

被引：1453

作者：

Ali, Mazhar N. ^{[1
]}

Xiong, Jun ^{[2
,3
]}

Flynn, Steven ^{[1
]}

Tao, Jing ^{[4
]}

Gibson, Quinn D. ^{[1
]}

Schoop, Leslie M. ^{[1
]}

Liang, Tian ^{[2
,3
]}

Haldolaarachchige, Neel ^{[1
]}

Hirschberger, Max ^{[2
,3
]}

Ong, N. P. ^{[2
,3
]}

Cava, R. J. ^{[1
]}

机构：

[1] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA

[2] Princeton Univ, Joseph Henry Labs, Princeton, NJ 08544 USA

[3] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA

[4] Brookhaven Natl Lab, Dept Condensed Matter Phys & Mat Sci, Upton, NY 11973 USA

来源：

NATURE | 2014年 / 514卷 / 7521期

基金：

美国国家科学基金会;

关键词：

COLOSSAL MAGNETORESISTANCE; GIANT MAGNETORESISTANCE; ELECTRICAL-PROPERTIES; NANOPARTICLES; TRANSITION; WS2;

D O I：

10.1038/nature13763

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Magnetoresistance is the change in a material's electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors(1), in magnetic memory(2), and in hard drives(3) at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures(4). Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity.

引用

页码：205 / +

页数：6

共 33 条

[1] THE MAGNETORESISTANCE OF BISMUTH CRYSTALS AT LOW TEMPERATURES [J].