AN AlGaAs/GaAs-BASED PLANAR GUNN DIODE OSCILLATOR WITH A FUNDAMENTAL FREQUENCY OPERATION OF 120 GHZ

被引：9

作者：

Maricar, Mohamed Ismaeel ^{[1
]}

Glover, James ^{[2
]}

Khalid, Ata ^{[3
]}

Li, Chong ^{[3
]}

Evans, Gwynne ^{[2
]}

Cumming, David S. R. ^{[3
]}

Oxley, Christopher H. ^{[1
]}

机构：

[1] De Montfort Univ, Leicester LE1 9BH, Leics, England

[2] De Montfort Univ, Fac Technol, Leicester LE1 9BH, Leics, England

[3] Univ Glasgow, MicroSyst Technol Res Grp, Glasgow, Lanark, Scotland

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2014年 / 56卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

planar Gunn diode; series inductor; oscillation frequency; power; coplanar waveguide; GaAs substrate;

D O I：

10.1002/mop.28606

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports the highest fundamental oscillator operating frequency of 120 GHz for gallium arsenide (GaAs)-based Gunn diode. The letter describes the design, fabrication, and test of the aluminum gallium arsenide (AlGaAs)/(GaAs) planar Gunn diode with an anode to cathode separation of 1 mu m and channel width of 120 mu m. The planar Gunn diode was designed with an integrated series inductor in coplanar waveguide format. The experimental results showed that the planar Gunn diode oscillated at a fundamental frequency of 120.47 GHz with an RF output power -9.14 dBm. This is highest fundamental frequency and power recorded for a GaAs-based Gunn diode. (C) 2014 Wiley Periodicals, Inc.

引用

页码：2449 / 2451

页数：4

共 15 条

[1] Terahertz sources and detectors [J].

Crowe, TW ;

Porterfield, DW ;

Hesler, JL ;

Bishop, WL ;

Kurtz, DS ;

Hui, K .

TERAHERTZ FOR MILITARY AND SECURITY APPLICATIONS III, 2005, 5790 :271-280

[2]

Haydl W.H., 1972, IEEE ELECTR DEVICE L, V61, P1972

[3] A planar Gunn diode operating above 100 GHz [J].

Khalid, A. ;

Pilgrim, N. J. ;

Dunn, G. A. ;

Holland, A. C. ;

Stanley, C. R. ;

Thayne, I. G. ;

Cumming, D. R. S. .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (10) :849-851

[4] A 218-GHz second-harmonic multiquantum well GaAs-based planar Gunn diodes [J].

Khalid, A. ;

Li, Chong ;

Papageorgiou, V. ;

Pilgrim, N. J. ;

Dunn, G. M. ;

Cumming, D. R. S. .

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2013, 55 (03) :686-688

[5] In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz [J].

Khalid, Ata ;

Li, C. ;

Papageogiou, V. ;

Dunn, G. M. ;

Steer, M. J. ;

Thayne, I. G. ;

Kuball, M. ;

Oxley, C. H. ;

Montes Bajo, M. ;

Stephen, A. ;

Glover, J. ;

Cumming, D. R. S. .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (01) :39-41

[6]

Li C., 2011, MILLIMETER WAVE PLAN

[7]

Li C., 2010, UNKN C SHEFF

[8] Novel Planar Gunn Diode Operating in Fundamental Mode up to 158 GHz [J].

Li, Chong ;

Khalid, A. ;

Pilgrim, N. ;

Holland, M. C. ;

Dunn, G. ;

Cumming, D. S. R. .

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 2009, 193

[9]

Maricar M. I., 2013, INT C ADV NAN EM ENG, P674

[10]

Maricar MI, 2013, 4 ANN SEM PASS RF MI, P2

← 1 2 →