TCT and test beam results of irradiated magnetic Czochralski silicon (MCz-Si) detectors

被引：7

作者：

Luukka, P. ^{[1
]}

Harkonen, J. ^{[1
]}

Maenpaa, T. ^{[1
]}

Betchart, B. ^{[2
]}

Czellar, S. ^{[1
]}

Demina, R. ^{[2
]}

Furgeri, A. ^{[3
]}

Gotra, Y. ^{[2
]}

Frey, M. ^{[3
]}

Hartmann, F. ^{[3
]}

Korjenevski, S. ^{[2
]}

Kortelainen, M. J. ^{[1
]}

Lampen, T. ^{[1
]}

Ledermann, B. ^{[3
]}

Lemaitre, V. ^{[4
]}

Liamsuwan, T. ^{[3
]}

Militaru, O. ^{[4
]}

Moilanen, H. ^{[1
]}

Simonis, H. J. ^{[3
]}

Spiegel, L. ^{[5
]}

Tuominen, E. ^{[1
]}

Tuominiemi, J. ^{[1
]}

Tuovinen, E. ^{[1
]}

机构：

[1] Helsinki Inst Phys, Helsinki, Finland

[2] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA

[3] Univ Karlsruhe TH, Inst Expt Kernphys, Karlsruhe, Germany

[4] Univ Catholique Louvain, B-1348 Louvain, Belgium

[5] Fermilab Natl Accelerator Lab, Batavia, IL 60510 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2009年 / 604卷 / 1-2期

基金：

芬兰科学院;

关键词：

Magnetic Czochralski silicon; Double junction; Beam test; Transient current technique; TRANSIENT CURRENT TECHNIQUE;

D O I：

10.1016/j.nima.2009.01.071

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Pad and strip detectors processed on high resistivity n-type magnetic Czochralski silicon (MCz-Si) were irradiated to several different fluences with protons. The pad detectors were characterized with the transient current technique (TCT) and the full-size strip detectors with a reference beam telescope and a 225 GeV muon beam. The TCT measurements indicate a double junction structure and space charge sign inversion in MCz-Si detectors after 6 x 10(14) 1 MeV n(eq)/cm(2) fluence. In the beam test a signal-to-noise (S/N) ratio of 50 was measured for a non-irradiated MCz-Si sensor, and a SIN ratio of 20 for the sensors irradiated to the fluences of 1 x 10(14) 1 and 5 x 10(14) 1 MeV n(eq)/cm(2). (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：254 / 257

页数：4

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