Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMT's

被引：87

作者：

Mateos, J ^{[1
]}

González, T

Pardo, D

Hoel, V

Happy, H

Cappy, A

机构：

[1] Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain

[2] Inst Electron & Microelectron Nord, CNRS, UMR 9929, Dept Hyperfraquences & Semicond, F-59652 Villeneuve Dascq, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 01期

关键词：

degeneracy; HEMT; Monte Carlo; quantum effects; simulation;

D O I：

10.1109/16.817592

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A classical Monte Carlo (MC) device simulation has been modified to locally introduce the effects of electron degeneracy and nonequilibrium screening. Its validity in the case of AlInAs/GaInAs HEMT's has been checked through the comparison, first, with a quantum Schrodinger-Poisson (SP) simulation in the case of a complicated layer structure, which is actually used in the fabrication of real devices, and second, with experimental results of static characteristics of recessed delta-doped HEMT's.

引用

页码：250 / 253

页数：4

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