Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs

被引：55
|
作者：
Roemer, Friedhard [1 ]
Witzigmann, Bernd [1 ]
机构：
[1] Univ Kassel, Dept Elect Engn, Computat Elect & Photon Grp, D-34121 Kassel, Germany
来源：
OPTICS EXPRESS | 2014年 / 22卷 / 21期
关键词：
LIGHT-EMITTING-DIODES; STRAINED WURTZITE SEMICONDUCTORS; EFFICIENCY DROOP; TRANSPORT; NANOSTRUCTURES; SIMULATION; GAN;
D O I：
10.1364/OE.22.0A1440
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We investigate the effect of the epitaxial structure and the acceptor doping profile on the efficiency droop in InGaN/GaN LEDs by the physics based simulation of experimental internal quantum efficiency (IQE) characteristics. The device geometry is an integral part of our simulation approach. We demonstrate that even for single quantum well LEDs the droop depends critically on the acceptor doping profile. The Auger recombination was found to increase stronger than with the third power of the carrier density and has been found to dominate the droop in the roll over zone of the IQE. The fitted Auger coefficients are in the range of the values predicted by atomistic simulations. (C) 2014 Optical Society of America
引用
收藏
页码：A1440 / A1452
页数：13
相关论文
共 50 条
  • [41] InGaN/GaN multiple-quantum-well LEDs with Si-doped barriers
    Hung, H.
    Lam, K. T.
    Chang, S. J.
    Chen, C. H.
    Kuan, H.
    Sun, Y. X.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (06) : H455 - H458
  • [42] On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements
    Piprek, Joachim
    Roemer, Friedhard
    Witzigmann, Bernd
    APPLIED PHYSICS LETTERS, 2015, 106 (10)
  • [43] Compact Electrical/Optical Model for InGaN/GaN Quantum-Well Based LEDs
    Ajaykumar, Arjun
    Zhou, Xing
    Syamal, Binit
    Ben Chiah, Siau
    Zhang, Li
    PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2015, : 766 - 769
  • [44] Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness
    Wei, X. C.
    Zhang, L.
    Zhang, N.
    Wang, J. X.
    Li, J. M.
    MRS ADVANCES, 2016, 1 (02): : 197 - 202
  • [45] Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness
    X. C. Wei
    L. Zhang
    N. Zhang
    J. X. Wang
    J. M. Li
    MRS Advances, 2016, 1 (2) : 197 - 202
  • [46] Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
    Feng, SW
    Cheng, YC
    Chung, YY
    Yang, CC
    Lin, YS
    Hsu, C
    Ma, KJ
    Chyi, JI
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) : 4441 - 4448
  • [47] Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures
    Badcock, Tom J.
    Hammersley, Simon
    Watson-Parris, Duncan
    Dawson, Phil
    Godfrey, Mike J.
    Kappers, Menno J.
    McAleese, Clifford
    Oliver, Rachel A.
    Humphreys, Colin J.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
  • [48] Internal piezoelectric field and Auger recombination in InGaN/GaN quantum wells: impact on device performance
    Samosvat, Dmitriy
    Karpova, Anastasia
    Zegrya, Georgy
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2025, 131 (02):
  • [49] Efficiency Droop Reduction in InGaN LEDs by Alternating AlGaN Barriers With GaN Barriers
    Yang, Yujue
    Zeng, Yiping
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 27 (08) : 844 - 847
  • [50] Effect of internal electric field in well layer of InGaN/GaN multiple quantum well light-emitting diodes on efficiency droop
    School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea, Republic of
    不详
    Jpn. J. Appl. Phys., 10
12345