共 50 条
- [24] Characterization of InGaN/GaN multiple quantum well structures. Application to LEDs PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 103 - 107
- [26] Effect of reverse leakage current on the reliability of InGaN/GaN high power LEDs 2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2016, : 824 - 827
- [29] Green InGaN/GaN LEDs with p-GaN Interlayer for Efficiency Droop Improvement PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS) 2016, 2016, : 217 - 220
- [30] Optimization of InGaN/GaN quantum wells for violet GaN/InGaN/AlGaN LEDs COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 449 - 452