Damage and defects from low-energy implants in Si

被引：10

作者：

Eaglesham, DJ ^{[1
]}

Agarwal, A ^{[1
]}

Haynes, TE ^{[1
]}

Gossmann, HJ ^{[1
]}

Jacobson, DC ^{[1
]}

Poate, JM ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,OAK RIDGE,TN 37831

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/S0168-583X(96)00470-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Recent results on extended defect formation after ion implantation are reviewed. Interstitial evaporation from {311} extended defects dominates transient diffusion over most of the range of temperatures, times, and dopant concentrations of technological interest. The reactions between interstitials and impurities are investigated by measuring the effect of O, P, B, and C impurities on {311} defects. Interstitial traps such as B and C exert a strong influence at concentrations > 10(18) cm(-3) Damage and defect formation are characterised for very shallow implants (2-5 keV Si). Even above the amorphisation threshold, stable {311} defects dominate the microstructure, despite the proximity of the surface.

引用

页码：1 / 4

页数：4

共 21 条

[1] BOURRET A, 1987, INST PHYS CONF SER, P39
[2] CHAO HS, 1996, J APPL PHYS, V79, P2353
[3] TRANSIENT DIFFUSION OF ION-IMPLANTED B IN SI - DOSE, TIME, AND MATRIX DEPENDENCE OF ATOMIC AND ELECTRICAL PROFILES
COWERN, NEB
JANSSEN, KTF
JOS, HFF
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (12) : 6191 - 6198
[4] Implant damage and transient enhanced diffusion in Si
Eaglesham, DJ
Stolk, PA
Gossmann, HJ
Haynes, TE
Poate, JM
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4) : 191 - 197
[5] IMPLANTATION AND TRANSIENT B-DIFFUSION IN SI - THE SOURCE OF THE INTERSTITIALS
EAGLESHAM, DJ
STOLK, PA
GOSSMANN, HJ
POATE, JM
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (18) : 2305 - 2307
[6] EAGLESHAM DJ, 1995, MICROSCOPY SEMICONDU, P451
[7] GOSSMANN HJ, 1996, APPL PHYS LETT, V67, P3135
[8] Jaraiz M, 1996, APPL PHYS LETT, V68, P409, DOI 10.1063/1.116701
[9] USE OF TYPE-II (END OF RANGE) DAMAGE AS DETECTORS FOR QUANTIFYING INTERSTITIAL FLUXES IN ION-IMPLANTED SILICON
LISTEBARGER, JK
JONES, KS
SLINKMAN, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) : 4815 - 4819
[10] KINETICS OF DAMAGE PRODUCTION IN SILICON DURING SELF-IMPLANTATION
MASZARA, WP
ROZGONYI, GA
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2310 - 2315

← 1 2 3 →