Growth studies of (Nb2O5)(1-x):XTiO2 & (Nb2O5)(1-X)&COLCHEM;XSiO2 single crystals and their dielectric behaviors

Nb2O5:TiO2 and Nb2O5:SiO2 systems show interesting dielectric properties. This presentation describes recent progress in growing (Nb2O5)(1-x):xTiO(2), (Nb2O5)(1-x):xSiO(2) ,x=0.05, single crystals by the laser heated pedestal growth (LHPG) technique and their dielectric behavior. Ceramic rods were used as seed and feed prepared by the mixed oxide method. Growth conditions such as temperature of melting zone and pulling rate were adjusted for each composition. Crystal symmetry and Growth direction were investigated by X-ray diffraction and Laue back-reflection analysis. Temperature dependences of the dielectric constant and loss tangent were measured over a broad frequency range (1 KHz-1 MHz) on sample cut parallel and the perpendicular to the growth direction.