Pulse-annealing study of photo-stimulated luminescence and trapped-hole states in BaFBr:Eu2+

被引：4
作者：
Ohnishi, A
Akimoto, I
Kanno, K
Iwabuchi, Y
Mori, N
机构：
[1] KYOTO UNIV,DEPT PHYS,KYOTO 606,JAPAN
[2] FUJI PHOTO FILM CO LTD,KANAGAWA 258,JAPAN
来源：
JOURNAL OF LUMINESCENCE | 1997年 / 72-4卷
关键词：
BaFBr:Eu2+; photo-stimulated luminescence; trapped hole center;
D O I：
10.1016/S0022-2313(96)00345-6
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Photo-stimulated luminescence (PSL) with F(Br-)-band light was studied with a pulse annealing technique in the X-rayed BaFBr and BaFBr:Eu2+ crystals. It was found that the PSL band due to Eu3+ centers in BaFBr:Eu2+ is kept unchanged for pulse annealing up to 280 K, though the one due to O- centers in BaFBr comes to disappear after pulse annealing around 200 K. This clearly indicates that Eu2+ ion plays an important role as the hole-trap in the image storage.
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收藏
页码：775 / 777
页数：3
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