GaN MMIC Power Amplifiers for S-Band and X-Band

被引：0
|
作者：
Suijker, Erwin M. [1 ]
Sudow, Mattias [2 ]
Fagerlind, Martin [2 ]
Rorsman, Niklas [2 ]
de Hek, A. P. [1 ]
van Vliet, F. E. [1 ]
机构：
[1] TNO Def Secur & Safety, Oude Waalsdorperweg 63, NL-2597 AK The Hague, Netherlands
[2] Chalmers Univ Technol, MC2, Microwave Electron Lab, S-41296 Gothenburg, Sweden
来源：
2008 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the AlGaN/GaN technology of Chalmers University of Technology using 0.25 mu m HEMTs. The S-band amplifier operates at frequencies from 3 to 4 GHz and has a maximum output power of 5.6 W with an associated efficiency of 28 %. The X-band amplifier has a maximum output power of 4.8 W.
引用
收藏
页码：567 / +
页数：2
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