22-nm immersion interference lithography

被引:55
作者
Bloomstein, T. M. [1 ]
Marchant, M. F. [1 ]
Deneault, S. [1 ]
Hardy, D. E. [1 ]
Rothschild, M. [1 ]
机构
[1] MIT, Lincoln Lab, Lexington, MA 02420 USA
关键词
D O I
10.1364/OE.14.006434
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Immersion interference lithography was used to pattern gratings with 22-nm half pitch. This ultrahigh resolution was made possible by using 157-nm light, a sapphire coupling prism with index 2.09, and a 30-nm-thick immersion fluid with index 1.82. The thickness was controlled precisely by spin-casting the fluid rather than through mechanical means. The photoresist was a diluted version of a 193-nm material, which had a 157-nm index of 1.74. An analysis of the trade-off between fluid index, absorption coefficient, gap size and throughput indicated that, among the currently available materials, employing a high-index but absorbing fluid is preferable to using a highly transparent but low-index immersion media. (c) 2006 Optical Society of America.
引用
收藏
页码:6434 / 6443
页数:10
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