Influence of InAs quantum dots on the transport properties of GaAs-based solar cell devices

被引：5
作者：
Kim, Haeri [1 ]
Park, Moon Ho [2 ]
Park, Sung Jun [2 ]
Kim, Ho-Sung [2 ]
Song, Jin Dong [2 ]
Kim, Sang-Hyuck [2 ]
Kim, Hogyoung [3 ]
Choi, Won Jun [2 ]
Kim, Dong-Wook [1 ]
机构：
[1] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea
[2] Korea Inst Sci & Technol, Ctr Optoelect Convers Syst, Seoul 136791, South Korea
[3] Seoul Natl Univ Sci & Technol, Dept Optometry, Seoul 139743, South Korea
来源：
CURRENT APPLIED PHYSICS | 2014年 / 14卷 / 02期
关键词：
Quantum dots; InAs; Solar cell; Trap states; SCHOTTKY DIODES;
D O I：
10.1016/j.cap.2013.11.003
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated both the photovoltaic and transport properties of GaAs based solar cells with and without InAs quantum dots (QDs). In small forward bias region, humps in the local ideality factor are found in the QD-embedded devices at low temperatures. This might be caused by the charges captured in the QD-induced defect states. The temperature dependence of the ideality factor, extracted from large voltage regions, was well explained by the tunneling-mediated interface recombination process. The reverse-bias current also exhibited a signature of trap-mediated tunneling. All these results suggested that the presence of trap states could cause the degraded photovoltaic performance of our QD-embedded solar cells. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码：192 / 195
页数：4
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