Role of impurities in the formation of point defects in Ti-Al alloys

被引:0
作者
Bakulin, A. V. [1 ,2 ]
Fuks, A. A. [1 ]
Kulkova, S. E. [1 ,2 ]
机构
[1] Natl Res Tomsk State Univ, Pr Lenina 36, Tomsk 634050, Russia
[2] Russian Acad Sci, Siberian Branch, Inst Strength Phys & Mat Sci, Pr Akad Sky 2-4, Tomsk 634055, Russia
来源
FUNCTIONAL MATERIALS AND NANOTECHNOLOGIES (FM&NT 2018) | 2019年 / 503卷
基金
俄罗斯基础研究基金会;
关键词
TI3AL;
D O I
10.1088/1757-899X/503/1/012003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of impurities on the point defect formation energies in Ti-Al alloys was studied by the projector augmented-wave method. The grand canonical formalism was applied to calculate the formation energies of several kinds of defects. It was shown that the formation energy of Al-vacancy decreases by similar to 1.3 eV with increasing its content in the series of alloys Ti3Al-TiAl-TiAl3, whereas the formation energy of Ti-vacancy changes insignificantly. In general, the formation of Ti-vacancies is more preferred in Ti-Al alloys rather than the formation of Al-vacancies. We demonstrate that Nb, Mo, Tc, Ru, Rh, Pd lead to increase of the formation energy of Al-vacancy if they occupy the Al sites, whereas only Mo and Tc increase the formation energy of Ti-vacancy. All 4d elements, if they substitute for Ti, reduce the formation energies of Al-vacancy. The influence of impurities on elastic constants is discussed.
引用
收藏
页数:4
相关论文
共 12 条
[1]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[2]   THERMAL FORMATION OF VACANCIES IN TIAL [J].
BROSSMANN, U ;
WURSCHUM, R ;
BADURA, K ;
SCHAEFER, HE .
PHYSICAL REVIEW B, 1994, 49 (10) :6457-6461
[3]   The site occupancies of alloying elements in TiAl and Ti3Al alloys [J].
Hao, YL ;
Xu, DS ;
Cui, YY ;
Yang, R ;
Li, D .
ACTA MATERIALIA, 1999, 47 (04) :1129-1139
[4]   From ultrasoft pseudopotentials to the projector augmented-wave method [J].
Kresse, G ;
Joubert, D .
PHYSICAL REVIEW B, 1999, 59 (03) :1758-1775
[5]   CONCENTRATIONS OF ATOMIC DEFECTS IN B2-FEXAL1-X - AN AB-INITIO STUDY [J].
MAYER, J ;
ELSASSER, C ;
FAHNLE, M .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1995, 191 (02) :283-298
[6]   Diffusion in the Ti-Al system [J].
Mishin, Y ;
Herzig, C .
ACTA MATERIALIA, 2000, 48 (03) :589-623
[7]   Effect of transition metal additives on electronic structure and elastic properties of TiAl and Ti3Al [J].
Music, Denis ;
Schneider, Jochen M. .
PHYSICAL REVIEW B, 2006, 74 (17)
[8]  
Perdew JP, 1996, PHYS REV LETT, V77, P3865, DOI 10.1103/PhysRevLett.77.3865
[9]  
Rudolph P, 2008, CRYSTAL GROWTH TECHN, P73
[10]   Single-crystal elastic constants of gamma-TiAl [J].
Tanaka, K ;
Ichitsubo, T ;
Inui, H ;
Yamaguchi, M ;
Koiwa, M .
PHILOSOPHICAL MAGAZINE LETTERS, 1996, 73 (02) :71-78