Role of impurities in the formation of point defects in Ti-Al alloys

被引:0
作者
Bakulin, A. V. [1 ,2 ]
Fuks, A. A. [1 ]
Kulkova, S. E. [1 ,2 ]
机构
[1] Natl Res Tomsk State Univ, Pr Lenina 36, Tomsk 634050, Russia
[2] Russian Acad Sci, Siberian Branch, Inst Strength Phys & Mat Sci, Pr Akad Sky 2-4, Tomsk 634055, Russia
来源
FUNCTIONAL MATERIALS AND NANOTECHNOLOGIES (FM&NT 2018) | 2019年 / 503卷
基金
俄罗斯基础研究基金会;
关键词
TI3AL;
D O I
10.1088/1757-899X/503/1/012003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of impurities on the point defect formation energies in Ti-Al alloys was studied by the projector augmented-wave method. The grand canonical formalism was applied to calculate the formation energies of several kinds of defects. It was shown that the formation energy of Al-vacancy decreases by similar to 1.3 eV with increasing its content in the series of alloys Ti3Al-TiAl-TiAl3, whereas the formation energy of Ti-vacancy changes insignificantly. In general, the formation of Ti-vacancies is more preferred in Ti-Al alloys rather than the formation of Al-vacancies. We demonstrate that Nb, Mo, Tc, Ru, Rh, Pd lead to increase of the formation energy of Al-vacancy if they occupy the Al sites, whereas only Mo and Tc increase the formation energy of Ti-vacancy. All 4d elements, if they substitute for Ti, reduce the formation energies of Al-vacancy. The influence of impurities on elastic constants is discussed.
引用
收藏
页数:4
相关论文
共 12 条
  • [1] PROJECTOR AUGMENTED-WAVE METHOD
    BLOCHL, PE
    [J]. PHYSICAL REVIEW B, 1994, 50 (24): : 17953 - 17979
  • [2] THERMAL FORMATION OF VACANCIES IN TIAL
    BROSSMANN, U
    WURSCHUM, R
    BADURA, K
    SCHAEFER, HE
    [J]. PHYSICAL REVIEW B, 1994, 49 (10): : 6457 - 6461
  • [3] The site occupancies of alloying elements in TiAl and Ti3Al alloys
    Hao, YL
    Xu, DS
    Cui, YY
    Yang, R
    Li, D
    [J]. ACTA MATERIALIA, 1999, 47 (04) : 1129 - 1139
  • [4] From ultrasoft pseudopotentials to the projector augmented-wave method
    Kresse, G
    Joubert, D
    [J]. PHYSICAL REVIEW B, 1999, 59 (03): : 1758 - 1775
  • [5] CONCENTRATIONS OF ATOMIC DEFECTS IN B2-FEXAL1-X - AN AB-INITIO STUDY
    MAYER, J
    ELSASSER, C
    FAHNLE, M
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1995, 191 (02): : 283 - 298
  • [6] Diffusion in the Ti-Al system
    Mishin, Y
    Herzig, C
    [J]. ACTA MATERIALIA, 2000, 48 (03) : 589 - 623
  • [7] Effect of transition metal additives on electronic structure and elastic properties of TiAl and Ti3Al
    Music, Denis
    Schneider, Jochen M.
    [J]. PHYSICAL REVIEW B, 2006, 74 (17)
  • [8] Perdew JP, 1996, PHYS REV LETT, V77, P3865, DOI 10.1103/PhysRevLett.77.3865
  • [9] Rudolph P, 2008, CRYSTAL GROWTH TECHN, P73
  • [10] Single-crystal elastic constants of gamma-TiAl
    Tanaka, K
    Ichitsubo, T
    Inui, H
    Yamaguchi, M
    Koiwa, M
    [J]. PHILOSOPHICAL MAGAZINE LETTERS, 1996, 73 (02) : 71 - 78