A novel CdCl2 treatment for glass/SnO2/CBD-CdS/CdTe solar cell

被引：16

作者：

Ghosh, B. ^{[1
]}

Ghosh, D. ^{[1
]}

Hussain, S. ^{[2
]}

Amarendra, G. ^{[3
]}

Chakraborty, B. R. ^{[4
]}

Dalai, M. K. ^{[4
]}

Sehgal, G. ^{[4
]}

Bhar, R. ^{[1
]}

Pal, A. K. ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Instrumentat Sci, Kolkata 700032, W Bengal, India

[2] UGC DAE CSR, Kalpakkam Node 603104, Kokilamedu, India

[3] IGCAR, MSG, MPD, Kalpakkam 603102, Tamil Nadu, India

[4] CSIR Natl Phys Lab, New Delhi 110012, India

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2014年 / 24卷

关键词：

II-VI semiconductor; Grain growth; SIMS; PV; CHEMICAL BATH DEPOSITION; CDTE THIN-FILMS; CDS;

D O I：

10.1016/j.mssp.2014.03.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Residual CdCl2 in chemical bath deposited (CBD) CdS layer was utilized to observe grain growth in CdTe layer for glass/SnO2/CBD-CdS/CdTe structures. The above as-deposited composite films were subjected to rapid thermal annealing (RTA) for observing grain growth and subsequent cell fabrication. The films were characterized by studying their microstructural and compositional properties. Interfacial mixing behavior was studied by secondary ion mass spectroscopy (SIMS) measurements which showed a slight interfacial diffusion of the CdS layer into the CdTe layer. Performance of a photovoltaic (PV) cell structure with non-optimized thickness of the CdTe and CdS layers obtained by this technique was studied. Carrier life time was obtained from V-oc decay measurement. Photoinduced charge separation observed in this glass/SnO2/CBD-CdS/CdTe structure was associated with an increase in the dielectric constant and a decrease in the device resistance. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：74 / 82

页数：9

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