Electrical properties of bulk n-ZnO single crystals under hydrostatic pressure

被引：2
|
作者：
Kamilov, I. K. [1 ]
Daunov, M. I. [1 ]
Bashirov, R. R. [1 ]
Gadjialiev, M. M. [1 ]
Musaev, A. M. [1 ]
Khokhlachev, P. P. [1 ]
机构：
[1] Russian Acad Sci, Inst Phys, Daghestan Sci Ctr, Makhachkala 367003, Russia
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 03期
关键词：
TRANSITION; GAAS;
D O I：
10.1002/pssb.200880535
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Pressure dependences of Hall coefficient R(H)(P) and resistivity rho(P) have been measured for n-ZnO bulk crystals with impurity concentration N(i) = 10(17)-10(18) cm(-3) and concentration of free electrons similar to 10(17) cm-3 at T = 3 00 K at hydrostatic pressures up to P = 25 GPa. It has been found that the exponential increase of R(H)(P) and rho(P), observed in the vicinity of the polymorphous transition P(PH) = 9 GPa, is caused by the increase of ionization energy of shallow donors. At P > P(PH), a step-like decrease of the resistivity has been observed, indicating a phase transition from diamond structure to NaCl-type structure. In accordance with formulas derived from the 'heterophase structure - effective medium' model, phase volume fractions in the critical region of the polymorphous transformation have been calculated and the threshold values of normalized effective resistivity have been determined. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：664 / 666
页数：3
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