The potential distribution at the semiconductor/solution interface

Analysis of reactions at semiconductor surfaces is complicated by the fact that the potential is partitioned between the space charge layer in the semiconductor and the Helmholtz layer on the solution side of the interface. Under deep depletion conditions, a change in the applied potential usually appears across the space charge layer and the band bending can be determined from the Mott-Schottky relation. Under conditions of weak depletion or accumulation, however, the applied potential is partitioned between the two double layers and the determination of the band bending is not straightforward. The partitioning of the applied potential at semiconductor / solution interface is analyzed and implications for charge transfer processes are discussed.