Multiwavelength mode-locked InGaAsP laser operating at 12 ch x 2 GHz and 16 ch x 10 GHz

被引：8

作者：

Park, ED ^{[1
]}

Croeze, TJ ^{[1
]}

Delfyett, PJ ^{[1
]}

Braun, A ^{[1
]}

Abeles, J ^{[1
]}

机构：

[1] Ctr Res & Educ Opt & Lasers, Sch Opt, Orlando, FL 32816 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 06期

关键词：

mode-locked laser; multiwavelength laser; semiconductor optical amplifier; spatial light modulator; wavelength-division multiplexing;

D O I：

10.1109/LPT.2002.1003110

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report on the development and characterization of an InGaAsP semiconductor optical amplifier(SOA) based ring cavity laser that emits up to 16 wavelengths in the 1550-nm region. The laser is loss modulation mode locked at up to 10 GHz with temporal pulses of similar to25 ps. Spectral control of the emission is accomplished by an intracavity 4-f spectral pulse shaper with a programmable liquid crystal spatial light modulator (SLM) in the Fourier plane. Voltage control of the transmissibility of the pixels of the SLM defines the wavelength channels and allows flattening of channels to produce a uniform intensity of channel outputs.

引用

页码：837 / 839

页数：3

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