Inorganic-organic photodiodes based on polyaniline doped boric acid and polyaniline doped boric acid:nickel(II) phthalocyanine composite

被引:42
作者
Yakuphanoglu, Fahrettin [1 ]
Kandaz, Mehmet [2 ]
Senkal, B. Filiz [3 ]
机构
[1] Firat Univ, Dept Phys, TR-23119 Elazig, Turkey
[2] Sakarya Univ, Dept Chem, TR-54140 Esentepe, Sakarya, Turkey
[3] Istanbul Tech Univ, Dept Chem, TR-34469 Istanbul, Turkey
关键词
Photodiode; Organic semiconductor; Boric acid doped polyaniline; CURRENT-VOLTAGE CHARACTERISTICS; PHOTOVOLTAIC PROPERTIES; ELECTRICAL CHARACTERIZATION; SCHOTTKY DIODE; FABRICATION; PARAMETERS; POLYMER;
D O I
10.1016/j.sna.2009.05.008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electronic and photovoltaic properties of hybrid organic photodiodes based on n-Si/boric acid doped polyaniline (PANIB) and n-Si/2,3,7,8,12,13,17,18-octakis(2'-aminophenylsulfanyl)-substituted-nickel(II) phthalocyanine: boric acid doped polyaniline (PANIB-PC) composite have been investigated. The current-voltage characteristics of the n-Si/PANIB and n-Si/PANIB-PC diodes were analyzed under dark and illumination conditions. The open circuit voltage, V-oc and short circuit current, I-sc values for the n-Si/PANIB and n-Si/PANIB-PC diodes under 105 mW/cm(2) were respectively found to be 0.280 V, 6.19 nA and 0.304 V, 0.091 nA. The fabricated inorganic/organic devices can be used as an optical sensor for optoelectronic applications. (C) 2009 Elsevier B.V. All rights reserved.
引用
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页码:191 / 196
页数:6
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