Glass-to-glass anodic bonding process and electrostatic force

被引：26

作者：

Wei, J ^{[1
]}

Nai, SML ^{[1
]}

Wong, CK ^{[1
]}

Lee, LC ^{[1
]}

机构：

[1] Singapore Inst Mfg Technol, Joining Technol Grp, Singapore 638075, Singapore

来源：

THIN SOLID FILMS | 2004年 / 462卷

关键词：

glass; anodic bonding; modeling; electrostatic force;

D O I：

10.1016/j.tsf.2004.05.067

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, 4-in. glass wafers (Pyrex 7740), with one wafer surface sputtered with a layer of amorphous Si, are successfully bonded together. The effects of the bonding parameters on bond quality are investigated using Taguchi method. Four process parameters: bonding temperature, voltage, bonding time and vacuum condition, are considered. The bond efficiency ranges from 94% to 99.9% and the bond strength ranges from 10 to 25 MPa. A model for evaluating the electrostatic force for glass-to-glass wafer anodic bonding is established. It is found that both bonding temperature and voltage applied have significant effects on the magnitude of the electrostatic force. At a high bonding temperature and a high voltage, a larger electrostatic force is generated due to higher ion mobility. The established model is in a good agreement with the experimental results. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：487 / 491

页数：5

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